Study on the Deposition Profile Characteristics in the Micron-Scale Trench Using Direct Simulation Monte Carlo Method

[+] Author and Article Information
Masato Ikegawa, Jun’ichi Kobayashi

Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan

Morihisa Maruko

Hiroshima Women’s Commercial College, Sakacho, Aki-gun, Hiroshima 731-4300, Japan

J. Fluids Eng 120(2), 296-302 (Jun 01, 1998) (7 pages) doi:10.1115/1.2820648 History: Received March 07, 1997; Revised March 03, 1998; Online December 04, 2007


As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.

Copyright © 1998 by The American Society of Mechanical Engineers
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