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Direct Simulation Monte Carlo Analysis of Rarefied Gas Flow Structures and Ventilation of Etching Gas in Magneto-Microwave Plasma Etching Reactors

[+] Author and Article Information
Masato Ikegawa

Mechanical Engineering Research Laboratory, Hitachi, Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japane-mail: mtikega@merl.hitachi.co.jp

Yoshihumi Ogawa, Ryoji Fukuyama

Power and Industrial Systems Kasado, Administrative Division, Hitachi, Ltd., 794 Higashitoyoi, Kudamatsu, Yamaguchi 744-8601, Japan

Tatehito Usui, Jun’ichi Tanaka

Mechanical Engineering Research Laboratory, Hitachi, Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan

J. Fluids Eng 124(2), 476-482 (May 28, 2002) (7 pages) doi:10.1115/1.1459074 History: Received March 14, 2001; Revised November 27, 2001; Online May 28, 2002
Copyright © 2002 by ASME
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References

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Nanbu,  K., Morimoto,  T., and Suetani,  M., 1999, “Direct Simulation Monte Carlo Analysis of Flows and Etch Rate in an Inductively Coupled Plasma Reactor,” IEEE Trans. Plasma Sci., 27(5), pp. 1379–1388.
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Edited by Manos, D. M., and Flamm, D. L., 1989, Plasma Etching—An Introduction, Academic Press, San Diego, p. 153.
Ikegawa,  M., Kobayashi,  J., and Fukuyama,  R., 2001, “Effects of Gas-Flow Structures on Radical and Etch-Product Density Distribution on Wafers in Magnetomicrowave Plasma Etching Reactors,” J. Vac. Sci. Technol., A 19(2), pp. 460–466.
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Figures

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Schematic of a magneto-microwave plasma etching reactor
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Calculation model for gas flow in the plasma chamber
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Gas-supply structures, (a) Type A (radial flow), (b) Type B (upward flow), and (c) Type C (downward flow)
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Velocity-vector distribution for Type A: (a) Kn=0.09(Q=40 cm3 min−1), (b) Kn=0.009(Q=40 cm3 min−1), (c) Kn=0.009(Q=400 cm3 min−1)
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Ventilation rate Rven and Knudsen number Kn for Type A
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Velocity vector distributions for the three gas-supply structures (Kn=0.03)
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Effect of gas-supply structure on ventilation rate Rven (by simulation) and etching rate ER (by experiment)
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Etch-product concentration contours for the three gas-supply structures (Kn=0.03) (normalized by the maximum)
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Effect of gas-inlet diameter Di for the downward-flow gas-supply structure (Type C) on ventilation rate Rven(Q=150 cm3 min−1,Pc=0.67 Pa)
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Effect of chamber pressure Pc on ventilation rate Rven for the downward-flow gas-supply structure (Type C) (Di=175 mm)
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Effect of gas flow rate Q and chamber pressure Pc on mean residence time τc of etch-products (Type C) (Di=175 mm)
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Effect of etching reaction probability Pre on ventilation rate Rven (Type C) (Di=175 mm,Q=100 cm3 min−1,Pc=0.5 Pa)

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