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TECHNICAL PAPERS

Buoyancy Convection During the Growth of SixGe1−x by the Traveling Solvent Method (TSM)

[+] Author and Article Information
M. Z. Saghir, T. J. Makriyannis

Ryerson University, Department of Mechanical, Aerospace and Industrial Engineering, 350 Victoria St, Toronto, ON, M5B 2K3

D. Labrie

Dalhousie University, Department of Physics and Atmospheric Science, Halifax, NS B3H 3J5

J. Fluids Eng 126(2), 223-228 (May 03, 2004) (6 pages) doi:10.1115/1.1669414 History: Received January 26, 2003; Revised October 06, 2003; Online May 03, 2004
Copyright © 2004 by ASME
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References

Matsumoto,  Satoshi, Maekawa,  Toru, and Takahashi,  Katsumi, 1997, “Numerical Analysis of InP Solution Growth by the Traveling Heater Method: Transient Response in the Case of no Heater Movement,” Int. J. Heat Mass Transfer, 40, pp. 3237–3245.
Okano,  Yasunori, Nishino,  Shin-saku, Ohkubo,  Shun-suke, and Dost,  Sadik, 2002, “Numerical Study of Transport Phenomena in the THM Growth of Compound Semiconductor Crystals,” J. Cryst. Growth, 237–239, pp. 1779–1784.
Meric,  R. A., Dost,  S., Lent,  B., and Redden,  R. F., 1999, “A Numerical Simulation Model for the Growth of GaxIn1−xSb by the Traveling Heater Method,” Applied Electromagnetics and Mechanics, 10, pp. 505–525.
Martinez-Tomas,  M. C., Munoz-Sanjose,  V., and Reig,  C., 2002, “A Numerical Study of Thermal Conditions in the THM Growth of HgTe,” J. Cryst. Growth, 243, pp. 463–475.
Lent,  B., Dost,  S., Redden,  R. F., and Liu,  Y., 2002, “Mathematical Simulation of the Traveling Heater Method Growth of Ternary Semiconductor Materials Under Suppressed Gravity Conditions,” J. Cryst. Growth, 237–239, pp. 1876–1880.
Ghaddar,  C. K., Lee,  C. K., Motakef,  S., and Gillies,  D. C., 1999, “Numerical Simulation of THM Growth of CdTe in Presence of Rotating Magnetic Fields (RMF),” J. Cryst. Growth, 205, pp. 97–111.
Liu,  Y. C., Okano,  Y., and Dost,  S., 2002, “The Effect of Applied Magnetic Field on Flow Structuresin Liquid Phase Electroepitaxy—A Three-Dimensional Simulation Model,” J. Cryst. Growth, 244, pp. 12–26.
Ye,  X., Tabarrok,  B., and Walsh,  D., 1996, “The Influence of Thermosolutal Convection on CdTe Growth by the Traveling Heater Method,” J. Cryst. Growth, 169, pp. 704–714.
Reig,  C., Gomez-Garcia,  C. J., and Munoz,  V., 2001, “A New Approach to the Crystal Growth of Hg1−xMnxTe by the Cold Traveling Heater Method (CTHM),” J. Cryst. Growth, 223, pp. 357–362.
Nakajima,  Kazuo, Kusunoki,  Toshihiro, Azuma,  Yukinaga, Usami,  Noritaka, Fujiwara,  Kozo, Ujihara,  Toru, Sazaki,  Gen, and Shishido,  Toetsu, 2002, “Compositional Variation in Si-rich SiGe Single Crystals Grown by Multi-Component Zone Melting Using Si Seed and Source Crystals,” J. Cryst. Growth, 240, pp. 373–381.
Azuma,  Y., Usami,  N., Ujihara,  T., Fujiwara,  K., Sazaki,  G., Murakami,  Y., and Nakajima,  K., 2003, “Growth of SiGe Bulk Crystals With Uniform Compostiosn by Utilizing Feedback Control System of the Crystal-Melt Interface Position for Precise Control of the Growth Temperature,” J. Cryst. Growth, 250, pp. 298–304.
Dold,  P., Barz,  A., Recha,  S., Pressl,  K., Franz,  M., and Benz,  K. W., 1998, “Growth and Characterization of Ge1−xSix (x≤10 at %) Single Crystals,” J. Cryst. Growth, 192, pp. 125–135.
FIDAP User Manual, 8.01 , 2002.

Figures

Grahic Jump Location
Finite element model for the heat conduction and the fluid flow model
Grahic Jump Location
Temperature boundary condition at the outside wall of the quartz along the solvent
Grahic Jump Location
Temperature boundary condition along the growth and dissolution interface
Grahic Jump Location
Solute boundary conditions along the radial direction 0.15 cm above growth interface
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Temperature and streamlines distribution in the melt
Grahic Jump Location
Silicon concentration distribution in the melt

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