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TECHNICAL PAPERS

Buoyancy Convection During the Growth of SixGe1−x by the Traveling Solvent Method (TSM)

[+] Author and Article Information
M. Z. Saghir, T. J. Makriyannis

Ryerson University, Department of Mechanical, Aerospace and Industrial Engineering, 350 Victoria St, Toronto, ON, M5B 2K3

D. Labrie

Dalhousie University, Department of Physics and Atmospheric Science, Halifax, NS B3H 3J5

J. Fluids Eng 126(2), 223-228 (May 03, 2004) (6 pages) doi:10.1115/1.1669414 History: Received January 26, 2003; Revised October 06, 2003; Online May 03, 2004
Copyright © 2004 by ASME
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References

Figures

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Finite element model for the heat conduction and the fluid flow model
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Temperature boundary condition at the outside wall of the quartz along the solvent
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Temperature boundary condition along the growth and dissolution interface
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Solute boundary conditions along the radial direction 0.15 cm above growth interface
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Temperature and streamlines distribution in the melt
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Silicon concentration distribution in the melt

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