0
TECHNICAL PAPERS

Growth of Binary Alloyed Semiconductor Crystals by the Vertical Bridgman-Stockbarger Process with a Strong Magnetic Field

[+] Author and Article Information
Stephen J. LaPointe

Department of Mechanical and Aerospace Engineering,  North Carolina State University, Campus Box 7910, Raleigh, NC 27695

Nancy Ma1

Department of Mechanical and Aerospace Engineering,  North Carolina State University, Campus Box 7910, Raleigh, NC 27695

D. W. Mueller

Department of Engineering,  Indiana University - Purdue University, Ft. Wayne, IN 46805

1

Corresponding author: 919-515-5231 (phone), 919-515-7968 (fax), nancy_ma@ncsu.edu (e-mail).

J. Fluids Eng 127(3), 523-528 (Jan 04, 2005) (6 pages) doi:10.1115/1.1899169 History: Received January 12, 2004; Revised January 04, 2005

This paper presents a model for the unsteady species transport for the growth of alloyed semiconductor crystals during the vertical Bridgman-Stockbarger process with a steady axial magnetic field. During growth of alloyed semiconductors such as germanium-silicon (GeSi) and mercury-cadmium-telluride (HgCdTe), the solute’s concentration is not small, so that density differences in the melt are very large. These compositional variations drive compositionally driven buoyant convection, or solutal convection, in addition to thermally driven buoyant convection. These buoyant convections drive convective transport, which produces nonuniformities in the concentration in both the melt and the crystal. This transient model predicts the distribution of species in the entire crystal grown in a steady axial magnetic field. The present study presents results of concentration in the crystal and in the melt at several different stages during crystal growth.

FIGURES IN THIS ARTICLE
<>
Copyright © 2005 by American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
Figure 1

Vertical Bridgman-Stockbarger ampoule with a uniform, steady, axial magnetic field Bẑ and with coordinates normalized by the ampoule’s inner radius

Grahic Jump Location
Figure 2

Temperature T(r,ζ,t=0) for Bi=10, and d=0.1, and a=1.0

Grahic Jump Location
Figure 3

Streamfunction ψ(r,ζ,t=0) for B=0.5T and a=1

Grahic Jump Location
Figure 4

Concentration in the melt C(r,ζ,t=0.9059) for B=0.5T and Co=0.10

Grahic Jump Location
Figure 5

Streamfunction ψ(r,ζ,t=72.47) for B=0.5T and Co=0.10

Grahic Jump Location
Figure 6

Concentration in the melt C(r,ζ,t=72.47) for B=0.5T and Co=0.10

Grahic Jump Location
Figure 7

Concentration in the crystal Cs(r,z) for B=0.5T and Co=0.10

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In