RESEARCH PAPERS: Electrical Effects at the Macro and Micro Scale

Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaNGaN Multi-Quantum-Wells

[+] Author and Article Information
Changsung Sean Kim, Jongpa Hong, Jihye Shim, Bum Joon Kim, Hak-Hwan Kim, Sang Duk Yoo, Won Shin Lee

Corporate R&D Institute CAE Group, SAMSUNG Electro-Mechanics Co. Ltd., Suwon, Gyunggi-Do 443-743, Korea

J. Fluids Eng 130(8), 081601 (Jul 30, 2008) (8 pages) doi:10.1115/1.2956513 History: Received April 03, 2007; Revised July 12, 2007; Published July 30, 2008

A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaNGaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaNGaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency power was verified to obtain the uniform temperature distribution by simulating the electromagnetic field as well as gas flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors.

Copyright © 2008 by American Society of Mechanical Engineers
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Figure 3

Two-dimensional axisymmetric modeling of a vertical MOVPE reactor (Thomas Swan CCS reactor, 6×2in. wafers)

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Figure 4

Three-dimensional simulation for prediction of mixing layer thickness of ammonia (black) and nitrogen (white)

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Figure 5

Contours of velocity magnitude and gas-phase indium distribution (top) and growth rate and indium content on a wafer surface (bottom)

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Figure 6

Comparison of computed and experimental data in indium content and PL wavelength in a wide range of growth temperature

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Figure 10

Schematic drawing of a planetary MOCVD reactor

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Figure 11

Three-dimensional modeling for one-eleventh of the whole reactor with centrifugal inlet nozzles (AIXTRON planetary reactor, 11×2in.)

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Figure 12

Velocity vectors on two planes at 1mm and 4mm above the susceptor with a wafer rotation of 50rpm

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Figure 13

Comparison of two- and three-dimensional flow fields with and without wafer orientation; (a) contours of indium molar fraction; (b) contours of particle density of indium clusters

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Figure 14

Temperature (color-scale) and magnetic (gray-scale) fields of a rf heater with two different susceptor rotating speeds

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Figure 15

Temperature distribution on the susceptor with respect to rotating speed

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Figure 1

Schematic of a classical MOVPE process for Group-III-nitride semiconductors

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Figure 2

Epitaxial structure of LED with InGaN∕GaN MQWs

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Figure 7

Schematic drawing of horizontal multiwafer MOVPE reactor (Nippon Sanso SR6000, Tokunaga (15))

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Figure 8

Three-dimensional modeling of horizontal MOVPE reactor (Nippon Sanso SR6000) and its temperature distribution during InGaN growth

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Figure 9

Comparison of experimental and computed indium distributions on a 2in. full wafer; (a) contour lines of indium composition with the maximum and minimum values (left: experiment; right: simulation); (b) indium composition along a centerline




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