Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals

[+] Author and Article Information
Joseph L. Morton

Department of Mechanical & Aerospace Engineering & Engineering Mechanics, University of Missouri, Rolla, MO 65409e-mail: jmorton@umr.edu

Nancy Ma

Department of Mechanical & Aerospace Engineering, North Carolina State University, Raleigh, NC 27695 e-mail: nancy_ma@ncsu.edu

David F. Bliss, George G. Bryant

U.S. Air Force Research Laboratory, Hanscom Air Force Base, MA 01731

J. Fluids Eng 123(4), 893-898 (Jul 10, 2001) (6 pages) doi:10.1115/1.1411968 History: Received October 05, 2000; Revised July 10, 2001
Copyright © 2001 by ASME
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Grahic Jump Location
Magnetically-stabilized liquid-encapsulated Czochralski crystal growth with a uniform, steady, axial magnetic field and with coordinates normalized by the crucible’s inner radius
Grahic Jump Location
Streamlines for melt-depletion flow for γ=0.4,b=0.6348,Ha=2,748, and Ug=5.556 μm/s
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Contours of the concentration in the melt C(r,ζ,t) for γ=0.4,b=0.6348,Ha=2,748,Ug=5.556 μm/s, and ks=0.001:(a)C(r,ζ,t=0.1984),(b)C(r,ζ,t=0.7935)
Grahic Jump Location
Contours of the concentration in the crystal Cs(r,Ξ) for γ=0.4,b0=0.6348,Ha=2,748,Ug=5.556 μm/s, and ks=0.001




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