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TECHNICAL PAPERS

Diffusion-Controlled Dopant Transport During Magnetically-Stabilized Liquid-Encapsulated Czochralski Growth of Compound Semiconductor Crystals

[+] Author and Article Information
Joseph L. Morton

Department of Mechanical & Aerospace Engineering & Engineering Mechanics, University of Missouri, Rolla, MO 65409e-mail: jmorton@umr.edu

Nancy Ma

Department of Mechanical & Aerospace Engineering, North Carolina State University, Raleigh, NC 27695 e-mail: nancy_ma@ncsu.edu

David F. Bliss, George G. Bryant

U.S. Air Force Research Laboratory, Hanscom Air Force Base, MA 01731

J. Fluids Eng 123(4), 893-898 (Jul 10, 2001) (6 pages) doi:10.1115/1.1411968 History: Received October 05, 2000; Revised July 10, 2001
Copyright © 2001 by ASME
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References

Hurle, D. T. J., and Series, R. W., 1994, “Use of a magnetic field in melt growth,” Handbook of Crystal Growth, D. T. J. Hurle, ed., Elsevier Science Publishers, Vol. 2A, pp. 261–285.
Walker, J. S., 1999, “Models of Melt Motion, Heat Transfer, and Mass Transport during Crystal Growth with Strong Magnetic Fields,” The Role of Magnetic Fields in Crystal Growth, Progress in Crystal Growth and Characterization of Materials, K. W. Benz, ed., Elsevier Science Publishers, Vol. 38, pp. 195–213.
Bliss,  D. F., Hilton,  R. M., Bachowski,  S., and Adamski,  J. A., 1991, “MLEK Crystal Growth of (100) Indium Phosphide,” J. Cryst. Growth, 20, pp. 967–971.
Bliss,  D. F., Hilton,  R. M., and Adamski,  J. A., 1993, “MLEK Crystal Growth of Large Diameter (100) Indium Phosphide,” J. Cryst. Growth, 128, pp. 451–456.
Ma,  N., and Walker,  J. S., 1997, “Dopant Transport during Semiconductor Crystal Growth with Magnetically Damped Buoyant Convection,” J. Cryst. Growth, 172, pp. 124–135.
Ma,  N., and Walker,  J. S., 1997, “Validation of Strong Magnetic Field Asymptotic Models for Dopant Transport in Semiconductor Crystal Growth,” J. Cryst. Growth, 180, pp. 401–409.
Hirtz,  J. M., and Ma,  N., 2000, “Dopant transport during semiconductor crystal growth. Axial versus transverse magnetic fields,” J. Cryst. Growth, 210, pp. 554–572.
Ma,  N., and Walker,  J. S., 2000, “A Model of Dopant Transport during Bridgman Crystal Growth with Magnetically Damped Buoyant Convection,” ASME J. Heat Transfer, 122, pp. 159–164.
Bryant, G. G., Bliss, D. F., Leahy, D., Lancto, R., Ma, N., and Walker, J. S., 1997, “Crystal Growth of Bulk InP from Magnetically Stabilized Melts with a Cusped Field,” IEEE Proceedings of the International Conference on Indium Phosphide and Related Materials, Hyannis, Cape Cod, MA.
Ma,  N., Walker,  J. S., Bliss,  D. F., and Bryant,  G. G., 1998, “Forced convection during liquid encapsulated crystal growth with an axial magnetic field,” ASME J. Fluids Eng., 120, pp. 844–850.
Ma,  N., and Walker,  J. S., 2001, “Inertia and Thermal Convection during Crystal Growth with a Steady Magnetic Field,” AIAA Journal of Thermophysics and Heat Transfer, 15, pp. 50–54.
Hjellming,  L. N., and Walker,  J. S., 1987, “Melt Motion in a Czochralski Puller with an Axial Magnetic Field: Motion due to Buoyancy and Thermocapillarity,” J. Fluid Mech., 182, pp. 335–368.
Hurle, D. T. J., 1993, Crystal Pulling from the Melt, Springer-Verlag, New York.
Hjellming,  L. N., and Walker,  J. S., 1988, “Melt Motion in a Czochralski Crystal Puller with an Axial Magnetic Field: Uncertainty in the Thermal Constants,” J. Cryst. Growth, 87, pp. 18–32.

Figures

Grahic Jump Location
Magnetically-stabilized liquid-encapsulated Czochralski crystal growth with a uniform, steady, axial magnetic field and with coordinates normalized by the crucible’s inner radius
Grahic Jump Location
Streamlines for melt-depletion flow for γ=0.4,b=0.6348,Ha=2,748, and Ug=5.556 μm/s
Grahic Jump Location
Contours of the concentration in the melt C(r,ζ,t) for γ=0.4,b=0.6348,Ha=2,748,Ug=5.556 μm/s, and ks=0.001:(a)C(r,ζ,t=0.1984),(b)C(r,ζ,t=0.7935)
Grahic Jump Location
Contours of the concentration in the crystal Cs(r,Ξ) for γ=0.4,b0=0.6348,Ha=2,748,Ug=5.556 μm/s, and ks=0.001

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