In the push to faster speed, lower power consumption, and reduced crosstalk, the conventional dielectric material SiO is going to be replaced by the materials with low dielectric constants. Although the current design that uses Cu and SiO dielectric material has achieved good reliability in wire bonding and flip-chip packages, whether or not the Cu-low k design can have the same reliability in these packages is unknown. Also, with decreasing dimensions and increasing complexity, thermal strains due to the mismatch of coefficients of thermal expansion are localized in very tiny zones with high magnitudes. Therefore, it is essential to find an experimental way to ensure interconnect layers to achieve required reliability. SIEM (Speckle Interferometry with Electron Microscopy) is a micro-mechanics measurement technique that has a spatial resolution approaching a few nanometers. It is able to perform the full field displacement mapping over a region of only several microns in diameter. The purpose of this paper is to demonstrate the capability of SIEM, which can perform a direct and in-situ measurement of local deformation fields of interconnection layers of an electronic chip.
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September 2002
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Measurement of Thermal Deformation of Interconnect Layers Using SIEM1
Sheng Chang and,
Sheng Chang and
State University of New York at Stony Brook, Department of Mechanical Engineering, Stony Brook, NY 11794-2300
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Fu-Pen Chiang,
Fu-Pen Chiang
State University of New York at Stony Brook, Department of Mechanical Engineering, Stony Brook, NY 11794-2300
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Yifan Guo
Yifan Guo
Conexant Systems, Inc., 4311 Jamboree Road, E04-401, Newport Beach, CA 92660
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Sheng Chang and
State University of New York at Stony Brook, Department of Mechanical Engineering, Stony Brook, NY 11794-2300
Fu-Pen Chiang
State University of New York at Stony Brook, Department of Mechanical Engineering, Stony Brook, NY 11794-2300
Yifan Guo
Conexant Systems, Inc., 4311 Jamboree Road, E04-401, Newport Beach, CA 92660
Contributed by the Electronic and Photonic Packaging Division of THE AMERICAN SOCIETY OF MECHANICAL ENGINEERS. Manuscript received by the EPPD May 31, 2001. Associated Editor: E. Lorenzini.
J. Electron. Packag. Sep 2002, 124(3): 310-313 (4 pages)
Published Online: July 26, 2002
Article history
Received:
May 31, 2001
Online:
July 26, 2002
Citation
Chang and , S., Chiang , F., and Guo , Y. (July 26, 2002). "Measurement of Thermal Deformation of Interconnect Layers Using SIEM." ASME. J. Electron. Packag. September 2002; 124(3): 310–313. https://doi.org/10.1115/1.1481367
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