Predominant high melting point solders for high-temperature and harsh environment electronics (operating temperatures from 200 to 250 °C) are Pb-based systems, which are being subjected to RoHS regulations because of their toxic nature. In this study, high bismuth (Bi) alloy compositions with Bi-XSb-10Cu (X from 10 wt % to 20 wt %) were designed and developed to evaluate their potential as high-temperature, Pb-free replacements. Reflow processes were developed to make die-attach samples made from the cast Bi alloys. Die-attach joints made from Bi-15Sb-10Cu alloy exhibited an average shear strength of 24 MPa, which is comparable to that of commercially available high Pb solders. These alloy compositions also retained original shear strength even after thermal shock (TS) between −55 °C and +200 °C and high-temperature storage (HTS) at 200 °C. Brittle interfacial fracture sometimes occurred along the interfacial NiSb layer formed between Bi(Sb) matrix and Ni metallized surface. In addition, heat dissipation capabilities, using flash diffusivity, were measured on the die-attach assembly and were compared to the corresponding bulk alloys. The thermal conductivity of all the Bi–Sb alloys was higher than that of pure Bi. By creating high volume fraction of precipitates in a die-attach joint microstructure, it was feasible to further increase thermal conductivity of this joint to 24 W/m·K, which is three times higher than that of pure Bi (8 W/m·K). Bi–15Sb–10Cu alloy has so far shown the most promising performance as a die-attach material for high-temperature applications (operated over 200 °C). Hence, this alloy was further studied to evaluate its potential for plastic deformation. Bi–15Sb–10Cu alloy has shown limited plastic deformation in room temperature tensile testing in which premature fracture occurred via the cracks propagated on the (111) cleavage planes of rhombohedral crystal structure of the Bi(Sb) matrix. The same alloy has, however, shown up to 7% plastic strain under tension when tested at 175 °C. The cleavage planes, which became oriented at smaller angles to the tensile stress, contributed to improved plasticity in the high-temperature test.
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March 2018
Research-Article
Lead-Free Alternatives for Interconnects in High-Temperature Electronics
Sandeep Mallampati,
Sandeep Mallampati
Department of Mechanical Engineering;
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
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Liang Yin,
Liang Yin
GE Global Research,
Niskayuna, NY 12309
Niskayuna, NY 12309
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David Shaddock,
David Shaddock
GE Global Research,
Niskayuna, NY 12309
Niskayuna, NY 12309
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Harry Schoeller,
Harry Schoeller
Germanna Community College,
Fredericksburg, VA 22408
Fredericksburg, VA 22408
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Junghyun Cho
Junghyun Cho
Department of Mechanical Engineering;
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
Search for other works by this author on:
Sandeep Mallampati
Department of Mechanical Engineering;
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
Liang Yin
GE Global Research,
Niskayuna, NY 12309
Niskayuna, NY 12309
David Shaddock
GE Global Research,
Niskayuna, NY 12309
Niskayuna, NY 12309
Harry Schoeller
Germanna Community College,
Fredericksburg, VA 22408
Fredericksburg, VA 22408
Junghyun Cho
Department of Mechanical Engineering;
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
Department of Materials Science and Engineering,
Binghamton University (SUNY),
Binghamton, NY 13902
1Present address: GLOBALFOUNDRIES, Malta, NY 12020.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received September 28, 2017; final manuscript received January 4, 2018; published online March 2, 2018. Assoc. Editor: Sreekant Narumanchi.
J. Electron. Packag. Mar 2018, 140(1): 010906 (7 pages)
Published Online: March 2, 2018
Article history
Received:
September 28, 2017
Revised:
January 4, 2018
Citation
Mallampati, S., Yin, L., Shaddock, D., Schoeller, H., and Cho, J. (March 2, 2018). "Lead-Free Alternatives for Interconnects in High-Temperature Electronics." ASME. J. Electron. Packag. March 2018; 140(1): 010906. https://doi.org/10.1115/1.4039027
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