We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.
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August 2005
Technical Papers
Ductile Regime Nanomachining of Single-Crystal Silicon Carbide
John Patten,
John Patten
Western Michigan University
, Parkview Campus, 1903 West Michigan Avenue, Kalamazoo, MI 49008
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Kudo Yasuto
Kudo Yasuto
Tohoku University
, Sendai, Japan
Search for other works by this author on:
John Patten
Western Michigan University
, Parkview Campus, 1903 West Michigan Avenue, Kalamazoo, MI 49008
Wei Gao
Tohoku University
, Sendai, Japan
Kudo Yasuto
Tohoku University
, Sendai, JapanJ. Manuf. Sci. Eng. Aug 2005, 127(3): 522-532 (11 pages)
Published Online: August 12, 2004
Article history
Received:
September 17, 2003
Revised:
August 12, 2004
Citation
Patten, J., Gao, W., and Yasuto, K. (August 12, 2004). "Ductile Regime Nanomachining of Single-Crystal Silicon Carbide." ASME. J. Manuf. Sci. Eng. August 2005; 127(3): 522–532. https://doi.org/10.1115/1.1949614
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