A multiscale finite element model is developed to simulate the chip formation in laser-assisted machining of silicon nitride ceramics. To consider the workpiece heterogeneous microstructure and crack evolution in silicon nitride machining, the workpiece material is modeled with continuum elements imbedded in thin interfacial cohesive elements. The continuum elements simulate the deformation of the bulk workpiece while the interfacial cohesive elements account for the initiation and propagation of intergranular cracks. The model reveals that discontinuous chips form by the propagation of cracks in the shear zone while the machined surface is generated by plastic deformation of the workpiece material under confined high pressure. The simulated cutting forces, chip morphology and subsurface integrity are compared with corresponding experimental observations and the validity of the present model is shown by the good agreements in the comparisons.
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e-mail: shin@ecn.purdue.edu
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April 2007
Technical Papers
Multiscale Finite Element Modeling of Silicon Nitride Ceramics Undergoing Laser-Assisted Machining
Yinggang Tian,
Yinggang Tian
Graduate Research Assistant
School of Mechanical Engineering,
Purdue University
, West Lafayette, IN 47907
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Yung C. Shin
Yung C. Shin
Professor
School of Mechanical Engineering,
e-mail: shin@ecn.purdue.edu
Purdue University
, West Lafayette, IN 47907
Search for other works by this author on:
Yinggang Tian
Graduate Research Assistant
School of Mechanical Engineering,
Purdue University
, West Lafayette, IN 47907
Yung C. Shin
Professor
School of Mechanical Engineering,
Purdue University
, West Lafayette, IN 47907e-mail: shin@ecn.purdue.edu
J. Manuf. Sci. Eng. Apr 2007, 129(2): 287-295 (9 pages)
Published Online: October 26, 2006
Article history
Received:
April 25, 2006
Revised:
October 26, 2006
Citation
Tian, Y., and Shin, Y. C. (October 26, 2006). "Multiscale Finite Element Modeling of Silicon Nitride Ceramics Undergoing Laser-Assisted Machining." ASME. J. Manuf. Sci. Eng. April 2007; 129(2): 287–295. https://doi.org/10.1115/1.2673595
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