1-7 of 7
Masaaki Koganemaru
Close
Save search
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Journal Articles

Application of the Nonlinear Fracture Mechanics Parameter Δ T * to Wire-Liftoff Lifetime Estimation of Power Modules at Elevated Temperatures

Nobuyuki Shishido, Yutaka Hayama, Yuki Akinaga, Shinya Taketomi, Masaaki Koganemaru, Seiya Hagihara, Noriyuki Miyazaki
Journal: Journal of Electronic Packaging
Publisher: ASME
Article Type: Research-Article
J. Electron. Packag. March 2025, 147(1): 011010.
Paper No: EP-24-1039
https://doi.org/10.1115/1.4066100
Published Online: August 24, 2024
View Article titled, Application of the Nonlinear Fracture Mechanics Parameter Δ T * to Wire-Liftoff Lifetime Estimation of Power Modules at Elevated Temperatures
Open the PDF for Application of the Nonlinear Fracture Mechanics Parameter Δ T * to Wire-Liftoff Lifetime Estimation of Power Modules at Elevated Temperatures in another window
Topics: Creep, Cycles, Fatigue, Fracture (Materials), Fracture mechanics, Temperature, Wire, Computational methods, Finite element analysis
Proceedings Papers

Device Simulation for Effects of Mechanical Stress on Electrical Performances of nMOSFETs: The Impacts of Stress-Induced Change of Intrinsic Carrier Density

Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki
Proc. ASME. InterPACK2013, Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes, V001T05A013, July 16–18, 2013
Publisher: American Society of Mechanical Engineers
Paper No: IPACK2013-73248
https://doi.org/10.1115/IPACK2013-73248
View Paper titled, Device Simulation for Effects of Mechanical Stress on Electrical Performances of nMOSFETs: The Impacts of Stress-Induced Change of Intrinsic Carrier Density
Open the PDF for Device Simulation for Effects of Mechanical Stress on Electrical Performances of nMOSFETs: The Impacts of Stress-Induced Change of Intrinsic Carrier Density in another window
Topics: Density, Simulation, Stress, Diffusion (Physics), Computer simulation, Electron mobility, Electrons, Heat conduction, Momentum, MOSFET transistors
Proceedings Papers

Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors

Masaaki Koganemaru, Keisuke Yoshida, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki, Hajime Tomokage
Proc. ASME. InterPACK2011, ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems, MEMS and NEMS: Volume 1, 479-486, July 6–8, 2011
Publisher: American Society of Mechanical Engineers
Paper No: IPACK2011-52150
https://doi.org/10.1115/IPACK2011-52150
View Paper titled, Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors
Open the PDF for Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors in another window
Topics: Metal oxide semiconductors, Stress, Transistors, Simulation, Electron mobility, Computer simulation, Diffusion (Physics), Electrons, Flow (Dynamics), Gates (Closures)
Proceedings Papers

Device Simulation of Mechanical Stress Effects on Electrical Characteristics of nMOSFETs: Impact of Local Stress in nMOSFETs

Masaaki Koganemaru, Keisuke Yoshida, Toru Ikeda, Noriyuki Miyazaki, Hajime Tomokage
Proc. ASME. InterPACK2009, ASME 2009 InterPACK Conference, Volume 1, 119-124, July 19–23, 2009
Publisher: American Society of Mechanical Engineers
Paper No: InterPACK2009-89112
https://doi.org/10.1115/InterPACK2009-89112
View Paper titled, Device Simulation of Mechanical Stress Effects on Electrical Characteristics of nMOSFETs: Impact of Local Stress in nMOSFETs
Open the PDF for Device Simulation of Mechanical Stress Effects on Electrical Characteristics of nMOSFETs: Impact of Local Stress in nMOSFETs in another window
Topics: Simulation, Stress, Stress concentration, Physics, Diffusion (Physics), Semiconductor devices, Simulation models, Computer simulation, Electron mobility, Gates (Closures)
Journal Articles

Evaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process

Masaaki Koganemaru, Toru Ikeda, Noriyuki Miyazaki, Hajime Tomokage
Journal: Journal of Electronic Packaging
Publisher: ASME
Article Type: Research Papers
J. Electron. Packag. March 2010, 132(1): 011003.
https://doi.org/10.1115/1.4000718
Published Online: March 4, 2010
View Article titled, Evaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process
Open the PDF for Evaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process in another window
Topics: Electron mobility, Molding, Resins, Stress, Silicon
Proceedings Papers

Stress-Induced Effects in Electronic Characteristics of n-Type MOSFETs in Resin-Molded Packages

Masaaki Koganemaru, Toru Ikeda, Noriyuki Miyazaki, Hajime Tomokage
Proc. ASME. InterPACK2007, ASME 2007 InterPACK Conference, Volume 1, 277-284, July 8–12, 2007
Publisher: American Society of Mechanical Engineers
Paper No: IPACK2007-33533
https://doi.org/10.1115/IPACK2007-33533
View Paper titled, Stress-Induced Effects in Electronic Characteristics of n-Type MOSFETs in Resin-Molded Packages
Open the PDF for Stress-Induced Effects in Electronic Characteristics of n-Type MOSFETs in Resin-Molded Packages in another window
Topics: Resins, Stress, Electron mobility, Molding, Diffusion (Physics), Experimental analysis, Silicon chips, Simulation
Proceedings Papers

Experimental and Numerical Evaluation of Residual Stress in IC Chips

Masaaki Koganemaru, Toru Ikeda, Noriyuki Miyazaki
Proc. ASME. InterPACK2005, Advances in Electronic Packaging, Parts A, B, and C, 1129-1134, July 17–22, 2005
Publisher: American Society of Mechanical Engineers
Paper No: IPACK2005-73110
https://doi.org/10.1115/IPACK2005-73110
View Paper titled, Experimental and Numerical Evaluation of Residual Stress in IC Chips
Open the PDF for Experimental and Numerical Evaluation of Residual Stress in IC Chips in another window
Topics: Stress, Electronic packages, Finite element methods, Resins, Semiconductors (Materials), Temperature, Elastic analysis, Failure, Gages, Numerical analysis