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Keywords: bonding processes
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Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Thermal Sci. Eng. Appl. December 2009, 1(4): 041009.
Published Online: June 24, 2010
... is applied. A Au/Si eutectic bond is developed under 3.0 bar pressure in a 470 ° C environment. The bonding lasts for 1 h. For the eutectic bond process, both the top and bottom pieces are symmetrical and bonded at a wafer level. The bonding quality is examined on the debonded interface. As shown...